| 摘要 |
PURPOSE:To form a deep diffused layer in a semiconductor device by diffusing a desired element along a defect or cleavage formed at least at a part of a crystalline substrate. CONSTITUTION:A scratch is formed with a diamond scriber on an Si substrate 11, a diffusing mask 14 is formed at the scratch, the substrate is heat treated, for example, at 1,150 deg.C in a BBr3 atmosphere for 30hr, and a diffused layer 15 having approximately rectangular shape of approx. 120mum deep and approx. 35mum lateral in expansion is formed. Thus, a deep diffused layer having a depth of more than several tens mum can be obtained for short time as compared with the conventional one, and preferably isolated. |
