| 摘要 |
<p>A method of manufacturing a semiconductor device having at least one insulated gate field effect transistor in which a silicon body is provided with a silicon dioxide gate insulation layer and in which a boron-doped polysilicon electrode layer is formed on said layer, characterized in that the electrode layer is deposited by means of a low-pressure process, that the boron doping of the electrode layer is obtained by ion implantation, and that the silicon body is then subjected to a thermal treatment in an atmosphere containing hydrogen in which boron is diffused from the electrode layer through the gate insulation layer into a channel region underlying the electrode layer.</p> |
