| 摘要 |
PURPOSE:To obtain a film having uniform characteristics over a large area with high efficiency by forming a deposited film on a support in the plasma atmosphere of a gas formed in the presence of a DC electric field and an alternating electric field. CONSTITUTION:Deposition chamber 101 is evacuated 102 to a predetermined vacuum degree, and support 109 is heated to a predetermined temp. A desired gas is introduced into chamber 101 from desired gas cylinder 105. When chamber 101 is adjusted to a desired vacuum degree, by applying a voltage to electrodes 107 from DC power source 108 and supplying alternating power to RF coil 110 from RF power source 111, glow discharge is generated between electrodes 107-1, 107-2 to form the plasma atmosphere of the gas for forming a deposited film. Thus, an amorphous-Si:H film or the like with superior electric and photoelectric properties is easily formed on support 109 with high reproducibility at a high speed. Electric energy required to form the alternating current is 50-2kW in case of an inductive method, and favorable frequency is 13.56MHz. |
