| 摘要 |
An amorphous silicon material, fabricated by the process of a glow discharge in silane, is utilized as the body of semiconductor devices. The amorphous silicon can be distinguished from other amorphous silicon in that it has the kinetic characteristics of an average density of localized states in the energy gap on the order of 107/cm or less. Amorphous silicon fabricated by a glow discharge in silane has a drift mobility for electron of 10-3cm2/V-sec or greater. |
