发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To make it possible to drive any group of circuits out of any group of circuits at any stage by a method wherein a level shifting between different sgages, using a diode or N-P-N transistor. CONSTITUTION:If a driving transistor TrT4 in the first stage is held ON, its electric potential becomes equal to one for emitter terminals common to the group of circuits in the first stage. Therefore, the potential of the positive electrode of a diode D is increased by about 0.7V over what is common to the emitters in the first stage. The power supplying terminal in the first stage has the same potential as that common to the emitters in the second stage. This electric potential is higher by about 0.7V than that of the emitters in the first stage. Hence, a TrT2 to be driven in the second stage is turned OFF. If the TrT4 is turned off, the diode D is not supplied with any current, turning off a TrT2. The diode D works to prevent, when the TrT4 is turned off, voltage from being applied to the point between the emitter-collector exceeding its voltage-resistance, enabling the NPNTr to be usable.
申请公布号 JPS56129360(A) 申请公布日期 1981.10.09
申请号 JP19800137801 申请日期 1980.10.03
申请人 HITACHI LTD 发明人 KANEKO KENJI;OKABE TAKAHIRO;OOMURA YOSHITO
分类号 H01L27/082;H01L21/331;H01L21/8226;H01L29/73;H03K19/091 主分类号 H01L27/082
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