SOLID IMAGE-PICKUP ELEMENT AND MANUFACTURE

摘要

PURPOSE:To increase a withstand of a photoconductive film, to contrive the improvement of S/N by reducing a current in darkness and to easily manufacture the element with an excellent characteristic by a method wherein the photoconductive film by a silicon film containing oxygen is formed on a substrate of the solid image- pickup element. CONSTITUTION:A silicon compound gas conduit 2 is arranged in a reactor 1 for forming the photoconductive film, and the conduit 2 is coupled with an oxygen gas conduit 3. An opposed electrode 5 of the reactor 1 is connected with a high frequency power source 4, the substrate 6 used for the solid image-pickup element being mounted on a substrate holder 7 in the reactor 1 and a substrate heating heater 8 is disposed under the substrate 6. The silicon compound gas or an inactive gas as a reactive gas is induced from the conduit 2 to cause a diluted gas of the above gas to carry out a deposition reaction through a discharge plasma. In this reaction, an oxygen compound gas or oxygen gas is induced from the conduit 3 to form the silicon film containing the oxygen on the substrate and improve the withstand of the photoconductive film.