| 摘要 |
PURPOSE:To selectively obtain the insulative portions between the respective element with easy by the use of a laser after forming a crystal layer containing Zn on the surface of GaAs. CONSTITUTION:In chemical compounds of III-V group, particularly GaAs, Zn is diffused rapidly at a relatively low temperature so as to form effective P-N junction in an N type crystal. Therefore, after forming a buffer layer 12 and an active layer 13 with the epitaxial growth on a GaAs substrate 11, GaAs 14 containing Zn is formed thereon with the vapor growth. Then, a beam from an Ar laser or so is selectively irradiated onto the boundary portions between respective circuit elements. With the selected preferable energy density and movement velocity of the irradiated beam, it is possible to form a Zn diffusion layer 16 which reaches the substrate 11, without giving thermal damages on the crystal surface. By so doing, effective insulative patterns are obtained between the respective elements through the connecting portions of the duffusion layer 16. |
