| 摘要 |
PURPOSE:To prevent current leakage even if part of an contact opening is diverted from a diffusion layer by a method wherein the formation of a P type diffusion region and an N type diffusion region is made through an independent process. CONSTITUTION:A contact opening 9 is made in an N<+> diffusion region 4 of a P well 2. Then a phosphorus doped Si layer 10 is formed only on the opening 9. This is followed by the oxidation of the surface of the poly-Si 10 and diffusion of phosphorus through the opening 9 on an N type Si substrate 1 to form a diffusion area 4'. Then contact holes 11, 13 are formed on the poly-Si 10 and a P<+> diffusion area 5. Next ions of boron are injected to form a diffusion area 5'. Thus a P-N junction is newly accomplished after openings in the regions 4 and 5, so that short-circuiting between metal wiring 14 and and the substrate 1 or the region 4, or the occurrence of current leakage can be prevented even if part of the contact opening is diverted from the diffused region. |
