发明名称 POLYACETYLENE SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To form a satisfactory barrier on a junction face by coating a catalyst solution to a solid surface, forming a liquid film of the catalyst solution on the solid surface and inducing acetylene to construct a junction of a free surface of an acetylene polymer film on the solid surface. CONSTITUTION:The solution mixed with prescribed amounts of titanium tetrabuto- oxide and triethyl aluminum to be the catalysts is made in a prescribed amount of an anisole solution. A flask wall surface is wetted with the solution and then, an acetylene gas is blown into the container, thereby permitting the acetylene film of cis form to be formed. Subsequently, the film thermally isomerized at a prescribed temperature for a prescribed period of time in high vacuum to be made a polyacetylene of a transformer type. The Al is vacuum-evaporated on the free surface and gold or platinum on the restrained surface of the polyacetylene film. Then, the Schottky barrier is formed between the free surface and an Al electrode and the junction, which is an ohmic contact between the restrained surface and the gold or platinum electrode to form a Schottky type diode having the satisfactory barrier on the junction surface.
申请公布号 JPS56129370(A) 申请公布日期 1981.10.09
申请号 JP19800031539 申请日期 1980.03.14
申请人 TORAY INDUSTRIES 发明人 TSUKAMOTO JIYUN;DAITOU KOUJI;MATSUMURA TERUICHIROU;TAKAHASHI AKIO
分类号 H01L51/05;H01L21/331;H01L29/73;H01L51/30 主分类号 H01L51/05
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