| 摘要 |
PURPOSE:To obtain increased electric signal though increasing the P-N junction capacitance of photodiode or P-N-diode, by forming the region of opposite conduction type to the region formed with inpurity having high concentration with the same conduction type as the substrate. CONSTITUTION:After forming SiO2 film 21 and Si3N4 film 22 having a prescribed thickness on P type silicon substrate 20, the photoresist film 23 except the field oxide film forming region is left with photoetching technology, and the Si3N4 film 22 is selectively rejected by taking the film 23 as a mask. Specified boron is ion-injected by taking the resist film 23 as a mask to form the P type region 24 as the injection region, and boron is ion-injected to the photodiode forming region except the gate forming region and photodiode forming region, by leaving the resist film 25 to form the P type region 26. Next, after removing the resist film 25, SiO2 film 27, and P type regions 28, 29 are formed with diffusion, allowing to increase the junction capacitance. |
