发明名称 MANUFACTURE OF POLYCRYSTALLINE SILICONE SEMICONDUCTOR
摘要 PURPOSE:To obtain a polycrystalline silicon of large crystalline particle size and of less defects by forming a power layer composed of materials with high fusing point between a multilayer silicon lump and a casting mold possessing the lump, solving a problem of stress and using the casting mold several times continuously. CONSTITUTION:A quartz crucible 1 with a prescribed diameter of which inner wall is coated with nitriding silicon powder 2 of a prescribed particle size to a prescribed thickness or more is prepared, and raw materials in high purity are put in the crucible 1 and heated at a prescribed temperature to be fused. The silicon completely made a fused liquid in the crucible 1 is slowly solididies all after a prescribed period of time to be a polycrystalline silicon 3. Forming the nitriding silicon powder on the inner wall of the crucible 1 prevents a reaction of the quartz and the silicon, preventing the crucible 1 from being broken by one time use and enabling the same to be used continuously several times.
申请公布号 JPS56129377(A) 申请公布日期 1981.10.09
申请号 JP19800031678 申请日期 1980.03.14
申请人 KOGYO GIJUTSUIN 发明人 SHIMURA AKIO;SAITOU TAKESHI
分类号 H01L31/04;H01L21/208;H01L31/0368 主分类号 H01L31/04
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