| 摘要 |
PURPOSE:To separate the elements from each other by a structure wherein an insulative film is covered on the side surface of islands in the form of an epitaxial layer on a substrate and also on the upper surface of the substrate not in contact with the islands, then an insulative film with low melting temperature is superimposed thereon, and finally a part of the insulative film is buried under the surface of the epitaxial layer. CONSTITUTION:An N epitaxial layer 11 on the surface of a P type Si substrate including an N<+> buried layer 10 is plasma-etched after applying a regist mask 13. With the regist mask 13 having been removed, an SiO2 film 14 is formed through wet oxidation and PSG15 containing P at least 5mol% is superimposed thereon. The surface thereof is smoothed by the processing made at about 1,000 deg.C and in N2 and the SiO2 film 14 is exposed through the uniform etching. Thereafter, P base 16 and N emitter 17 are formed and then Al wiring 18 is applied according to the normal techniques. With this arrangement, insulative separation layers can be obtained at the conditions where the generation or growth of crystal defects are neglible, and it becomes also possible to obtain the monolithic IC with the improved accuracy of photograph etching and the improved degree of integration. |
