| 摘要 |
PURPOSE:To permit simple and sure execution of gas leakage detection with high sensitivity by mixing at least 1% or more of He gas into gas for manufacturing a semiconductor wherein an He leakage detector is arranged around a manufacturing device or in a room. CONSTITUTION:At least 1% or more of helium gas is mixed into mixed gas 7 for manufacturing a semiconductor. With leaked gas 7 from a piping or the like absorbed in a detector detection section 9, the very small amount of an He molecule in vacuum is firstly ionized by the action of electric field. Next, a kinetic direction is deviated and curved at constant curvature corresponding to mass by the action of magnetic field and the detection of He only is performed by an ion detector locating on a path 9. With the He sensed by a detector 8, an alarm panel 12 for gas leakage is operated through a signal line 11 to send an alarm and an initial valve for supplying gas 7 is also urgently cut off. The detection section 9 is also installed around a suction blower 3 or in a clean room. Therefore, gas leakage generated from the places except around a semiconductor manufacturing device 5 will also be detected. |
