| 摘要 |
A contact (4) to a region (14) of a semiconductor device extends through a window in a series of surface layers at least one (1) of which is of polycrystalline semiconductor material the edge of which is oxidised (27) to define, at least in part, the window. A junction type field effect semiconductor device has a drain region (11) of one conductivity type formed on a surface of a low impurity density single crystal region (13) of the same conductivity type. A gate region (14) of the opposite conductivity type encloses the drain region (11). A polycrystal region (1) is formed on the drain region (11) and a contact window is formed with a part determined by a side oxidation film (27) on the polycrystal region (1). This contact window is used to receive conducting material (4) connected to the gate region. Also disclosed in the application are methods of fabricating junction type field effect semiconductor devices of this type. <IMAGE> |
