MONOLITHIC INTEGRATED SEMICONDUCTOR DEVICE WITH AT LEAST ONE I2L STRUCTURE, MEMORY CELL USING SUCH DEVICE AND MEMORY MATRIX USING SUCH MEMORY CELL,申请号EP19790100816-传众专利搜索

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发明名称	MONOLITHIC INTEGRATED SEMICONDUCTOR DEVICE WITH AT LEAST ONE I2L STRUCTURE, MEMORY CELL USING SUCH DEVICE AND MEMORY MATRIX USING SUCH MEMORY CELL
摘要
申请公布号	EP0004871(B1)	申请公布日期	1981.10.07
申请号	EP19790100816	申请日期	1979.03.16
申请人	INTERNATIONAL BUSINESS MACHINES CORPORATION	发明人	HEUBER, KLAUS, DIPL.-ING.;KLINK, ERICH, DIPL.-ING.;RUDOLPH, VOLKER, DIPL.-PHYS.;WIEDMANN, SIEGFRIED, DR. ING.
分类号	H01L21/331;G11C11/411;H01L21/761;H01L21/8226;H01L27/02;H01L27/082;H01L29/73;H03K3/288;H03K19/091;(IPC1-7):01L27/08;11C11/40;01L27/02	主分类号	H01L21/331
代理机构		代理人
主权项
地址

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