A method of manufacturing a semiconductor device, and a device, for example a BOMIS FET, so manufactured.

摘要

An insulating layer 12 having a window therein is formed on a semiconductor substrate 11. A semiconductor layer 13 is formed on the insulating layer 12 and in the window in the insulating layer 12 on the exposed surface of the semiconductor substrate 11. A portion of the semiconductor layer 13 in the window in the insulating layer 12 and a portion 11a of the underlying substrate are made molten by annealing with an energy beam, for example a laser beam. Thereby, impurity contained in the substrate 11 is diffused into the semiconductor layer 13 to provide a doped single-crystalline region 13S.