发明名称 |
Method for manufacturing semiconductor integrated circuits utilizing special contact formation |
摘要 |
A method for manufacturing semiconductor integrated circuits such as metal oxide semiconductor field effect transistors having source and drain regions to which contact holes are made such that not only the contact parts of the source and the drain regions, but also both surface parts of a field oxide layer which are adjacent to the outer edges of source and drain regions, are exposed and contacted.
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申请公布号 |
US4292728(A) |
申请公布日期 |
1981.10.06 |
申请号 |
US19790048090 |
申请日期 |
1979.06.13 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
ENDO, NORIO |
分类号 |
H01L21/3213;H01L21/033;H01L21/306;H01L21/336;H01L21/762;H01L21/768;(IPC1-7):H01L21/28;H01L21/31 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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