| 摘要 |
A method of manufacturing a semiconductor device is disclosed in which a surface of a silicon body is provided successively with a silicon oxide layer and silicon nitride layer. Parts of the surface are exposed and are subjected to an oxidation treatment so as to obtain a sunken oxide pattern, during which treatment an undesired small silicon nitride strip or "white ribbon" is formed, and remaining parts of the silicon nitride layer and the underlying silicon oxide layer are then etched away. In the etching treatment, silicon nitride is etched more rapidly than silicon oxide and silicon, while silicon nitride is etched at approximately the same rate as silicon, so that the undesired "white ribbon" is removed.
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