| 摘要 |
PURPOSE:To simplify the wiring of a semiconductor light emitting device and to reduce the size of the device by superposing a light emitting semiconductor substrate integrated with light emitting elements with a silicon substrate integrated with light emitting element starting and memory function elements. CONSTITUTION:P type light emitting regions 21-26 are formed on an N type GaP substrate 1 as a light emitting semiconductor substrate integrated with 6 light emitting elements. PNPN elements 41-46 are integrated corresponding to the light emitting regions 21-26 of the substrate 1 with a silicon monocrystalline unit 3. The light emitting element staring and memory functions are incorporated in the elements 41-46 of the unit 3, and the cathodes K1-K6 of the elements 41-46 are connected to the anodes A1-A6 respectively of the light emitting elements. The anodes of the elements 41-46 are connected to a common terminal 5, gate terminals G1-G6 are connected to the gates, and the light emitting elements of the substrate 1 are grounded at the common cathode. Then, the substrate 1 is superposed with the unit 3 to simplify the wiring of the terminals, and the manufacture of the device can be facilitated, and the size of the device can be reduced. |
