| 摘要 |
PURPOSE:To obtain a device with a high reliability preventing disconnection by stacking a conductive poly Si layer having a thick and thin section and an SiO2 layer having a thin and thick section corresponding to the thick and thin arrangement thereof an SiO2 on an Si substrate while an activated region is provided on the substrate surface excluding the section immediately beneath the conductive poly Si thin film. CONSTITUTION:An SiO22 of 1,000Angstrom , a P-added poly Si3 and an Si3N4 mask are stacked on an N type Si substrate 1 and an ion is injected thereinto to make a channel stopper. The layer 3 is selectively oxidzed so as to leave an isolating oxide thick film 6 and a layer 33 about 0.6mum therebeneath. The mask 4 is removed and the layers 3 and 2 are selectively etched to make a window. When a gate oxide film about 1,000Angstrom thick is made, it provides an oxide film 7. Thereafter, according to an accepted practice, the assembly is provided with a poly Si gate 8, a source 9, a drain 10 and an offset gate 11 and covered with an SiO212 on which electrodes 14-16 are mounted. This facilitates the mounting of the electrodes on the poly Si layer while smoothing the surface thereof thereby preventing disconnection and increasing the reliability. |
