| 摘要 |
PURPOSE:To accomplish a contactless evaluation of a semiconductor device at a high accuracy by measuring the directional distribution of the secondary beam employing a plurality of detecting sections combining a energy discriminating device or a split collector electrode. CONSTITUTION:There are peaks 22 and 23 in different secondary beam distributions. When a proper potential is given a collector electrode 11, a charged secondary beam can be led outside an energy discriminator 6 passing through a screen 12 without being trapped. If a proper potential is selected between the screen 12 and a multiplex channel plate MCP19, the secondary beam reaches a collector 20 via the CMP19 and 19'. In the collector 20, while electrodes 20' and 20'' are viewed, beam 22 concentrates greatly on the electrode 20'. When the outputs of the two electrodes are the same, the release peak of the beam distributes on the central plane. The computation of the outputs of four electrodes enables estimation of consine in the direction of the secondary beam with respect to the axis of an incident primary beam 8. In this manner, the amount of the secondary beam, directional distribution and energy distribution are analyzed to examine a wafer pattern and actions. |
