发明名称 GROWING DEVICE FOR GASEOUS PHASE OF SEMICONDUCTOR
摘要 PURPOSE:To obtain the uniform distribution of growth speed by a mechanism wherein a reaction furnace is formed in two-stage structure, a boundary of upper and lower stages is made up in latticed shapes, and a location of a supply gas and ejecting apertures are varied in the gas current direction, moving gratings. CONSTITUTION:A heating jig 11 of a wafer 12 is entered into a reaction pipe of a lower stage, and gaseous phase growth is conducted. A supply gas is introduced into a pipe of an upper stage. A boundary section is partitioned by means of movable gratings 9, 10. a, b Are horizontal gratigs and c, d gas current direction gratings, these gratings are made of quartz, and magnets are enclosed into the insides. Magnets 8 are also attached to outside knobs 6, and the gratings 9 are laterally moved without leakage by the revolution of the knobs. The gratings 10 are similarly moved in the gas current direction by the revolution of knobs 7. Thus, supply gas ejecting ports 13 located at arbitrary positions and having arbitrary dimensions can be manufactured. An upper plate 14 is sealed with a ring 15 in fluorine rubber, and removed when washing the gratings. According to this constitution, the uniform distribution of growth speed is obtained both in the gas current direction and the horizontal direction even under various gaseous phase conditions.
申请公布号 JPS56126913(A) 申请公布日期 1981.10.05
申请号 JP19800030364 申请日期 1980.03.12
申请人 HITACHI LTD 发明人 AOYAMA TAKASHI;SUZUKI TAKAYA;INOUE HIRONORI
分类号 H01L21/205;C23C16/455;C30B25/14 主分类号 H01L21/205
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