发明名称 HIGHLY INTEGRATED SEMICONDUCTOR
摘要 PURPOSE:To accomplish a high integration by arranging a joint section of lead wires on the top and bottom of a package in a multistage. CONSTITUTION:A ceramic carrier 10 forms steps 13-15 toward the circumference thereof surrrounding a pellet 11 like a stair case. Leads 16 and 17 are provided on the steps 13 and 14 and a cap is welded on the step 15 with a glass or the like. The leads 16 and 17, made up of a metalized layer and a joint section 16a, exposes a terminal 16b downward on the bottom of the carrier past a boundary of the step 14. The lead 17 exposes on the side of the carrier and forms a terminal 17b downward around the bottom of the carrier. The leads 16 and 17 are formed circumferentially deviated from each other and the joints 16a and 17a of the leads are alternately connected to the pellet thereby preventing mutual interference. This enables almost the doubling of the number of the leads as compared to the single stage construction. An ample room is secured for the lead width to match the accuracy of the lead joints thereby preventing interference between the leads adjacent to each other. Thus, a highly integrated pellet can be packaged.
申请公布号 JPS56126948(A) 申请公布日期 1981.10.05
申请号 JP19800030376 申请日期 1980.03.12
申请人 HITACHI LTD;HITACHI OME ELECTRONIC CO 发明人 FURUKAWA MICHIAKI;SEKIHASHI MASAO;UESAWA MASAHIRO;OOTSUKA KANJI;USAMI TAMOTSU
分类号 H01L23/12;H01L23/498;H01L23/52 主分类号 H01L23/12
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