| 摘要 |
PURPOSE:To eliminate the increase of an interface level density caused by radiation damage and form a semiconductor device excellent in characteristic by a method wherein H ions are implanted in an insulating film formed on the semiconductor substrate surface or an interface of the film and the substrate. CONSTITUTION:An SiO2 film and an Si3N4 film are selectively formed on the P type Si substrate 1 and heat-treated in an oxidation atmosphere to form a field oxidation film 4, other regions are slightly oxidized to form a thin (500-1,000Angstrom ) SiO2 film 5, P, Sb etc., implanted through the SiO2 film 5 to form N type regions 9, 10 and after then, the H ions are implanted in the SiO2 film and the Si-SiO2 interface is anealed. Whereby since the interface level density on the semiconductor surface to be formed with channels thereon can be made zero even a large quantity of the interface level density being grown due to the radiation damage, the semiconductor device of MOSIC in good characteristic can be formed. |
