| 摘要 |
PURPOSE:To obtain a satisfactory ohmic contact by a method wherein when a contact hole is formed in an oxidized film mounted on a semiconductor substrate, an etching is applied using an etching liquid containing I or KI. CONSTITUTION:The oxidized film is formed on the Si substrate and etched with HF containing a prescribed quantity (10-20% being suitable) of I or KI and formed the opening and then, a metal is evaporated to form an ohmic contact electrode. Whereby since a very thin oxidized film is formed on the bottom surface of the opening by the I acting as an oxidizing agent, a thick oxidized film is not formed during the cleaning after the etching, when the opening is formed, so that the satisfactory ohmic contact can be obtained when the metal is evaporated. |
