| 摘要 |
PURPOSE:To improve a yield by a method wherein the etching end point is accurately detected by a light of a specific wave length emitted from a reaction product when a metallic film which is attached on a different matter and covered by a natural oxidized film is plasma-etched. CONSTITUTION:When the metallic film of Al and the like which is caused by the natural oxidized film is plasma-etched on the surface, the specific wave length in the plasma ray generated by the reaction between the Al and a radical of an etching gas is selected, the output of the selected wave length is converted to voltage, a value VA' which is obtained by adding a desired value Valpha to the output voltage VA (1 2) during the application of the etching to the surface oxidized film is made a threshold, the point of time when the output voltage reaches the threshold VA' after having passed through the highest value VMa is automatically detected to be made the end point 3 and then, an over etching is further applied for a prescribed period of time. Whereby since the etching end point can automatically accurately identified, the yield and reliability of the semiconductor device are improved. |
