发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To enable to form an electrode by performing a simple positioning for the subject semiconductor device by a method wherein, after the mask consisting of a photoresist is fixed on the base metal surface, a plurality of base metal is exposed by performing an exposure, a developing and a baking, and a metal is attached using an immersion method. CONSTITUTION:On the entire main surface of the semiconductor 1 covered by the base metal 2, a dryfilm photoresist 7 is laminated using a roller press-fitting method. Then, a photomask 8 is placed on the resist 7. At this time, a positioning is performed in such manner that the opaque section to be formed on the photomask 8 will be coincided with the base metal 2. Then, the hole corresponding to the wiring of the base metal 2 is formed on the resist 7 by performing the exposure, developing and baking. Successively, in the state wherein the resist 7 is coated, the above is immersed in a solder vessel and the bump of a metal 10 is attached. lastly, the resist 7 is removed. Through these procedures, an electrode can be formed in a short time by performing a simple positioning.
申请公布号 JPS56125829(A) 申请公布日期 1981.10.02
申请号 JP19800027913 申请日期 1980.03.07
申请人 HITACHI LTD;HITACHI HARAMACHI DENSHI KOGYO 发明人 KAMOSHITA TOSHIKAZU;SHIMURA TATSUO
分类号 C23C14/00;C23C14/24;H01L21/283;H01L21/288;H01L21/60 主分类号 C23C14/00
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