发明名称 Connecting wires for semiconductor device - using wires of copper and tin or similar alloy and connecting to aluminium electrodes
摘要 <p>The method of forming a connection between conductor strips (2,3) and a semiconductor device (5) such as a transistor, uses thin conductor wires (8) between the strips and the aluminium zones (6,7) forming the base and emitter electrodes. Instead of using gold conductors, a copper-tin, or a copper-tin-lead or a copper-tin-indium alloy is used. The first alloy has a 20 to 60 percent by weight of copper. The second alloy has a 50/40/10 mixture by weight, and the third alloy also has a 50/40/10 mixture.</p>
申请公布号 DE3011661(A1) 申请公布日期 1981.10.01
申请号 DE19803011661 申请日期 1980.03.26
申请人 LICENTIA PATENT-VERWALTUNGS-GMBH 发明人 HELBER,HERBERT,ING.
分类号 H01L23/49;H01L23/495;(IPC1-7):01L23/48 主分类号 H01L23/49
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