发明名称 |
Semiconductor device |
摘要 |
Semiconductor devices, one having a planar bipolar high-voltage semiconductor circuit element comprising an island-shaped region of one conductivity type. On its lower side the island-shaped region is bounded by a first pn junction having a comparatively high breakdown voltage, and laterally by a second pn junction having a comparatively low breakdown voltage. The doping and the thickness of the island-shaped region are so small that the region is entirely depleted before breakdown occurs. The second semiconductor device having a field effect transistor of the lateral or vertical type with an island-shaped region having a contact region and bounded at the bottom by a pn junction having a comparatively high breakdown voltage and laterally by a second pn junction having a comparatively low breakdown voltage. The doping and thickness of the island-shaped region are so small that the region situated between the second pn junction and the contact region is fully depleted before breakdown at the second pn junction occurs.
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申请公布号 |
US4292642(A) |
申请公布日期 |
1981.09.29 |
申请号 |
US19790004004 |
申请日期 |
1979.01.16 |
申请人 |
U.S. PHILIPS CORPORATION |
发明人 |
APPELS, JOHANNES A.;COLLET, MARNIX G.;HART, PAUL A. H.;VERHOEVEN, JOHANNES F. C. M. |
分类号 |
H01L29/73;H01L21/331;H01L29/06;H01L29/732;H01L29/74;H01L29/747;H01L29/78;H01L29/808;H01L29/812;(IPC1-7):H01L29/90 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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