发明名称 |
High pressure plasma deposition of silicon |
摘要 |
Polycrystalline silicon is deposited on the interior surface of a shaped container. The silicon is deposited by reacting hydrogen and a silicon bearing gas in the presence of a high pressure plasma. The silicon body is separated from the shaped container by utilizing thermal expansion shear stress.
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申请公布号 |
US4292342(A) |
申请公布日期 |
1981.09.29 |
申请号 |
US19800148095 |
申请日期 |
1980.05.09 |
申请人 |
MOTOROLA, INC. |
发明人 |
SARMA, KALLURI R.;RICE, JR., M. JOHN;LESK, I. ARNOLD |
分类号 |
C01B33/02;C23C14/22;C23C16/01;C23C16/513 |
主分类号 |
C01B33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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