| 摘要 |
PURPOSE:To prevent shortcircuit between electrodes, by eliminating a scrath on a stepped section between Si3N4 and SiO2 by etching an Si3N4 membrane and an SiO2 membrane on an As added membrane at the same time in freon type plasma. CONSTITUTION:An SiO2 membrane 33 with a prescrived opening is formed on a substrate 31 provided ona base layer 32, an Si34 and an SiO235 which contain As are selectively formed, and these are heat-treated at a high temperature to provide an emitter layer 36. And then, when it is covered by an Si3N4 membrane 37 and provided with a resist mask 38, and the Si3N4 membrane 37 and the SiO235 on the As added poly Si layer 34 are etched at the same time in CF4+H2 plasma, occurrence of scratch is prevented. And then, if base electrodes 50 of Ti40, Pt41 and Au42 and an emitter electrode 60 are formed by providing silicified platinum layers 38 and 39 as usual, as it is free from scratch, it is possible to prevent occurrence of dregs of Pt and shortcircuit between the electrodes 50 and 60. |
