| 摘要 |
PURPOSE:To permit a high-output fundamental transverse mode oscillation by a method wherein the refractive indexes of the semiconductor layers surrounding an active layer are made smaller than that thereof, and the stripe width for injecting circuit into the active layer is made smaller than that thereof. CONSTITUTION:By using an SiO2 strip mask 12, Cd is diffused into an N type InP substrate 1 to produce P type current blocks 2. Then, an active layer 4, P type InP5 and P type InGaAsP6 are piled thereon, and a mesa etch is applied thereto reaching the layer 2 by using an SiO2 mask 13. N type InP7 is again deposited to fill the mesa grooves. Thereafter, conventionally, the P side is coated with Au- Zn 10, and the N side with Au-Sn 11. By said constitution, the width of the current injected into the active layer 4 is restricted within the width W0 of the layer 3, so that the radiative recombination of carriers is strongest at the center portion of the active layer, where the largest again distribution is formed. Accordingly, even though the active layer width Wa is approximately three times as wide as those of conventional devices, a hihg-output fundamental transverse mode oscillation can be obtained. |
