发明名称 TUBE WITH BONDED CATHODE AND ELECTRODE STRUCTURE AND GETTER
摘要 <p>The variety of technologies that have been applied in the development of a bonded grid cathode are described. These include chemical vapor deposition of tungsten, molybdenum, iridium BN, and Si3N4 on both sides of a sintered tungsten cathode disk. Zirconium and titanium getters have been used to eliminate nitrogen evolution problems. The getter plates are also used as heat shields for the bonded heater. Films of Si3N4 have been added to the insulation to prevent calcium and barium diffusion into the layer and maintain adequate resistivity and breakdown strength. Plasma etching was introduced as a method of removing Si3N4 from the cathode pores. A new method, erosion lithography, is used for making the fine-detail grid structure, combining air erosion and lithographic techniques.</p>
申请公布号 CA1109918(A) 申请公布日期 1981.09.29
申请号 CA19790336158 申请日期 1979.09.06
申请人 UNITED STATES GOVERNMENT, AS REPRESENTED BY THE SECRETARY OF THE A 发明人 OLIVER, DAVID W.;LAVOO, NORMAN T.
分类号 H01J19/42;H01J19/70;H01J23/02;(IPC1-7):01J29/04 主分类号 H01J19/42
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