ACTIVE MATRIX SUBSTRATE

摘要

PURPOSE:To obtain an active matrix substrate where a MOSFET with small leak current variance is mounted while suppressing a leak current to a small level by providing a metallic film which covers the channel formation area of the semiconductor thin film of the MOSFET used as a switching element via an insulating film. CONSTITUTION:The MOSFET which has a gate electrode 4 on one surface of the semiconductor thin film via the insulating film and a source electrode 71 and a drain electrode 4 on the other surface is provided on an insulating transparent substrate 3, and the active matrix substrate is constituted by connecting the source electrode 71 to a data value electrode, the gate electrode 4 to a scanning line electrode, and the drain electrode to a picture element electrode; and the metallic film 10 is provided on the semiconductor electrodes 72 between the source electrode 71 and drain electrode 72 via the insulating film 9. The metallic film 10 provided on the channel formation area of the semiconductor thin film via the insulating film is held at a proper potential to stabilize the potential in the channel formation area and this metallic film cuts off light incident on the channel formation area, so a leak radio wave between the source and drain electrodes is reduced by both effects.