| 摘要 |
PURPOSE:To eliminate the variation in the resistance of a resin-sealed type semiconductor device due to a strain by setting a semiconductor pellet having resistance elements so that the elements are directed at 45 deg. of the longitudinal direction of an enclosure, molding the enclosure with the resin and sealing it with the resin. CONSTITUTION:Resistance elements 12, 13 are formed in parallel with or perpendicularly to the (110) crystalline axial direction on a semiconductor pellet 11 in a predetermined crystalline axial direction of an Si single crystal such as, for example, when the Si cyrstalline plate has a main surface on a (100) plane by impurity diffusion, ion implantation or the like. The elements are placed fixedly on a mount base 16, wire bonded to metallic leads 14, and molded in a rectangular enclosure 15 of insulating resin. At this time the directions of the elements 12, 13 are inclined at 45 deg. with respect to the longitudinal direction of the enclosure. Thus, anisotropic resistance change caused by strain due to the resin sealing can be eliminated to improve the electric characteristics of the semiconductor device. |
