| 摘要 |
PURPOSE:To simplify the steps of manufacturing a semiconductor device by forming a mask with photoresist on a semiconductor substrate to be formed with a surface channel CCD to form a buried channel CCD, then removing the mask and forming a surface channel CCD. CONSTITUTION:The first oxide film 2 is covered on the upper surface of a silicon semiconductor substrate 1. A photoresist 3 is formed with a mask on the upper surface of a surface channel (SC) type CCD forming region X, phosphorus ion (P<+>) is injected to form an N<+> type impuritydoped layer 5 on the region not masked, and a buried channel (BC) type CCD is formed. Thereafter, the photoresist 3 is removed, the first insulating electrode 6, the second insulating electrode 11 and oxide films 9, 12 are formed on the upper surface of the oxide film 2, and P<+> type layer 8 and N<-> type layer 8' becoming charge guide regions are formed on the surface of the substrate 1. Thus, two phase CCD of the SC type BC type are simultaneously formed on the same substrate. |
