| 摘要 |
PURPOSE:To conduct a heat treatment without homogeneous and of equal thickness oxide film growth and unnecessary oxide film growth by preventing the back flow of air by providing a gas suction mechanism directly under the vicinity of the gas outlet of a reaction tube disposed approximately horizontally of a heat treating device. CONSTITUTION:A gas inlet tube 13 is provided at one end of a reaction tube 11 disposed approximately horizontally in a heater 12, a gas outlet 14 is provided at the other end thereof in a heat treating device, in which a gas suction mechanism 16 having a suction body 17 connected through a suction tube 18 and a damper 20 to a suction pump 19 is provided in the vicinity of the gas outlet. Thus, an annealing is conducted without homogeneous and of equal thickness oxide film growth and unnecessary oxide film growth by preventing the back flow of air in the vicinity of the bottom of the gas outlet side of the reaction tube, the yield of the production thereof can be improved, and the quality can be improved. |
