| 摘要 |
PURPOSE:To prevent the deterioration of a resistance value to repeated heating and prolong the lifetime of the device by providing high-resistance silicon layers above and below a silicon heater layer in the region of a heating part in the thermal head wherein the silicon heater layer is used as a heating resistor. CONSTITUTION:As the high-resistance silicon layer is used a thin polycrystalline silicon film whereon oxygen or nitrogen of about 10wt% or loss is doped and whose specific resistance is about 10<-1>-10<8>OMEGAcm. On a substrate 2 whereon a glaze layer 3 for accumulating heat is provided are laminated the high-resistance silicon layer 71, the silicon heater layer (having specific resistance of 2X10<-4>-5X10<-3>OMEGAcm approx). 4, a pair of lead layers 51 and 53 opposed to each other at a prescribed distance and the high-resistance silicon layer 75 in this order and further thereon a protecting layer 6 is provided, whereby the thermal head is formed. |
