发明名称 |
Signal level shifter integrated circuit - has negative conductive, highly-doped layer conductively coupled to emitter of input transistor |
摘要 |
<p>This integrated circuit shifts a signal voltage level without changing its amplitude as may be required, e.g. in order to make the signal TTL-compatible. The distributed capacities thus introduced, far from degrading the signal, are arranged to improve the pulse edge. The output of emitter follower transistor (T1) via a resistor (R) and a constant current source (K) provides the level shifted signal. Distributed capacity (C1) is short circuited resulting in another capacitor (C2) bridging the resistor (R) and improving pulse shape.</p> |
申请公布号 |
DE3006176(A1) |
申请公布日期 |
1981.09.24 |
申请号 |
DE19803006176 |
申请日期 |
1980.02.19 |
申请人 |
SIEMENS AG |
发明人 |
WILHELM,WILHELM,DR.-ING.;BERBALK,GUENTHER |
分类号 |
H01L27/07;H03K19/013;H03K19/018;(IPC1-7):03K19/092;03K19/013;01L27/06 |
主分类号 |
H01L27/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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