发明名称 Signal level shifter integrated circuit - has negative conductive, highly-doped layer conductively coupled to emitter of input transistor
摘要 <p>This integrated circuit shifts a signal voltage level without changing its amplitude as may be required, e.g. in order to make the signal TTL-compatible. The distributed capacities thus introduced, far from degrading the signal, are arranged to improve the pulse edge. The output of emitter follower transistor (T1) via a resistor (R) and a constant current source (K) provides the level shifted signal. Distributed capacity (C1) is short circuited resulting in another capacitor (C2) bridging the resistor (R) and improving pulse shape.</p>
申请公布号 DE3006176(A1) 申请公布日期 1981.09.24
申请号 DE19803006176 申请日期 1980.02.19
申请人 SIEMENS AG 发明人 WILHELM,WILHELM,DR.-ING.;BERBALK,GUENTHER
分类号 H01L27/07;H03K19/013;H03K19/018;(IPC1-7):03K19/092;03K19/013;01L27/06 主分类号 H01L27/07
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