Method of making semiconductor photodetector with reduced time-constant

摘要

An insulating layer on the surface of a slab of photo-responsive semiconductor material is treated to produce a pattern of projections or mesas. The treatment includes the steps of producing a mask on the insulating layer using electron-beam lithography, etching holes in the layer through the mask, stripping the mask, and finishing with the usual electrical conductors on the insulating layer. An alternate embodiment etches the surface of the slab to produce a scrabrous surface, then coats with aluminum oxide and electrical conductors.