| 摘要 |
A method of etching away a selected portion (24) of silicon oxide from a body of silicon oxide and tapering the edge of the remaining silicon oxide that delineates the selected portion comprises the step of (a) delineating the selected portion with a coating of a photoresist(20) on a surface of the body and (b) etching away the selected portion with a composite solution that contains both an etchant for the silicon oxide and a component for lifting only the edge of the photoresist from the interface between the photoresist and the silicon oxide at the delineation of the selected portion.
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