| 发明名称 |
Semiconductor devices containing protons and deuterons implanted regions |
| 摘要 |
A process for manufacturing gallium arsenide devices in which regions of high resistivity are created in the gallium arsenide by subjecting the regions to bombardment by protons and then by deuterons, and devices so made.
|
| 申请公布号 |
US4290825(A) |
申请公布日期 |
1981.09.22 |
| 申请号 |
US19790011959 |
申请日期 |
1979.02.13 |
| 申请人 |
UNITED KINGDOM ATOMIC ENERGY AUTHORITY |
发明人 |
DEARNALEY, GEOFFREY;STEEPLES, KENNETH;SAUNDERS, IAN J. |
| 分类号 |
H01L21/265;H01L21/76;(IPC1-7):H01L21/26 |
主分类号 |
H01L21/265 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
