| 摘要 |
PURPOSE:To obtain a good photosensor by simplifying the process by etching with an acid solution using an amorphous chalcogenite film as a masking material and removing the influence of the thermal decomposition of the resist at the time of heat treatment of II-VI group compounds avoiding the use of a resist photomask. CONSTITUTION:A transparent conductive film 2, a II-VI group compound film 3 having a large band gap and a II-VI group coumpound film 4 having a smaller gap than the film 3 are layered on a transparent substrate 1. Then, an amorphous chalcogenite film 5 is piled up thereon using a metallic mask 6. These piled up materials are etched with an acidic solution using the film 5 as a mask and an Au-electrode is provided selectively thereto. According to this constitution, a sensor having a small dark current at a time of a reverse bias and a high speed light response can be easily prepared without using a resist mask and any increase of etching process. |
