| 摘要 |
PURPOSE:To decrease a threshold value current by setting a striped electrode of a laser element having an epitaxial layer containing three kinds of elements among In, Ga, As and P so that the longitudinal direction thereof may correspond with the strong direction of the lattice stripes of a substrate on the (100) surface of the substrate containing Ga, P and As. CONSTITUTION:The growth values of GaAsP on the (100) surface of GaAs occur the lattice stripes having uneveness which cross at right angles one another in the (110) direction, said stripes being plentiful in the horizontal CD direction, but few in the longitudinal direction. A double hetero-epitaxial growth is performed by a liquid phase on such substrate. The first clad layer 2, active layer 3, and a second clad layer 4 are allowed to grow on a GaAsP. In this case, the sectional surface (cleveage) of AB has a plenty of uneveness, but the sectional surface of CD is a very even growth surface. When the stripes electrode is formed on the wafer, if the longitudinal direction of the electrode is formed parallel to the CD direction, the threshold value current can decreased extremely. |
