| 摘要 |
PURPOSE:To uniformalize the holding voltage of cells and suppress the decrease in noise margin owing to the parasitic resistance of word lines by selecting the resistance value of load resistances which determine the magnitude of the holding voltage of the memory cells. CONSTITUTION:Respective memory cells CEL1-CELn have the memory patterns similar to those of the CEL1, and load resistances r1, r1'-rn, r'n are made resistances values as large as those around the center of memory array. In this case, the pattern width of the load resistances is made narrower with the memory cells nearer the center, whereby the load resistance values are increased. Thereby, the product of the holding current and load resistance value with respect to the memory cell near the center is maintained at above a fixed value, and the nonuniformity of the holding voltage occuring in the nonuniformity of the holding current distribution compensated. |
