| 摘要 |
<p>Production of single-crystals. Method of growing at least one single-crystal in a cylindrical housing (4) comprising a source area (6) and a well area (7) heated at different uniform temperatures. By an appropriate setting of these temperatures it is possible to nucleate and grow at least one single-crystal at (8). Application particularly to the production of single-crystals of HgI2. </p> |
