| 摘要 |
<p>A method for element isolation utilizing insulating materials (6) in a semiconductor substrate (1) is proposed. This method is characterized in that an oxidizable material layer (3) of polycrystalline silicon or the like is formed, the oxidizable material layer (3) disposed at the element-isolatingforming regions is oxidized using an oxidation mask (4), the oxidation mask (4) is removed and, if necessary at least part of the unoxidized oxidizable material (3) below the mask (4) is removed. Predetermined processes such as oxidation and diffusion are performed thereafter to form semiconductor elements such as MOS transistors and bipolar transistors with high packaging density and reliability.</p> |
