发明名称 |
Method and apparatus for monitoring etching |
摘要 |
Method and apparatus for monitoring a dry etching process using gas plasma, wherein a ratio of a spectrum intensity which varies depending on the process of the etching process to a spectrum intensity which is independent of the process of the etching process is determined and a resulting signal intensity is monitored. The completion of the etching process can be exactly determined irrespective of variation of the etching conditions.
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申请公布号 |
US4289188(A) |
申请公布日期 |
1981.09.15 |
申请号 |
US19800150939 |
申请日期 |
1980.05.19 |
申请人 |
HITACHI, LTD. |
发明人 |
MIZUTANI, TATSUMI;UEKI, KAZUYOSHI;IIDA, SHINYA;KOMATSU, HIDEO |
分类号 |
C23F4/00;H01J37/32;H01L21/302;H01L21/3065;(IPC1-7):H01L21/30;C23F1/00 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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