发明名称 |
Process for forming low-reactance interconnections on semiconductors |
摘要 |
Several methods are disclosed for forming an air gap between crossing thin film conductors utilized to interconnect electronic components on a substrate. Each of the methods involves the use of photolithographic techniques to form overpassing conductors on a support material covering the overpassed conductors, followed by removal of the support material. Both deposition and plating techniques are described for forming the overpassing conductors.
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申请公布号 |
US4289846(A) |
申请公布日期 |
1981.09.15 |
申请号 |
US19790108064 |
申请日期 |
1979.12.28 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
PARKS, EARL L.;ZAIDEL, SIMON A. |
分类号 |
H05K3/46;H01L21/768;(IPC1-7):H01L21/28 |
主分类号 |
H05K3/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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