发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To prevent corrosion due to a water penetration by forming two layers of SiO2 and Si3N4 on an Al layer to prevent the occurrence of a crack. CONSTITUTION:An Al layer does not contact a Si3N4 layer directly because the Si3N4 layer is laid on a SiO2 layer, while the SiO2 layer works to lessen the effect of causing the Si3N4 to have crack. Although the Al and Si3N4 layers have not been attached tightly together, the adhesion between the Al and SiO2 layers are excellent. Therefore, even if the pat portion of the Al layer is exposed when making a window for an electrode, no water is allowed to penetrate into the interface. As a result, a PSG protective film will never form an electrolyte through hydrolysis, thus preventing the Al from being corroded.</p>
申请公布号 JPS56116628(A) 申请公布日期 1981.09.12
申请号 JP19800020003 申请日期 1980.02.20
申请人 FUJITSU LTD 发明人 NAKANO ATSUSHI;SHIRAI KAZUNARI
分类号 H01L23/522;H01L21/31;H01L21/318;H01L21/768;H01L23/532 主分类号 H01L23/522
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